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Proceedings Paper

Luminescence of CdSiP2 crystals
Author(s): Tsezarii A. Kryskov; Vasyl Golonzhka; Antonina A. Gubanova; Ruslan Poveda; Algimantas Sodeika
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Paper Abstract

Some general features of the behavior of Cu, Zn, Bi, S, Eu and Mn impurities in CdSiP2 crystals are studied by analyzing photo- and electron beam-excited luminescence spectra measured in a temperature range of 1.4 to 300 K, as well as by determining their electrical parameters. The impurities are established to substitute mainly the cadmium in the crystalline lattice and to promote the formation of complexes of defects, which are radiative recombination centers. Cd vacancies as well participate in the defect complex formation processes. A radiation ascribed to interstitial Cd-type defects, is discovered in CdSiP2 crystals. From comparison with Raman scattering measurements, the direct band gap was evaluated to be 2.42 eV at 1.4 K.

Paper Details

Date Published: 20 April 1998
PDF: 4 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306231
Show Author Affiliations
Tsezarii A. Kryskov, Kamianets-Podilsky Pedagogical Institute (Ukraine)
Vasyl Golonzhka, Podillja Khmelnitsky Technological Univ. (Ukraine)
Antonina A. Gubanova, Kamianets-Podilsky Pedagogical Institute (Ukraine)
Ruslan Poveda, Kamianets-Podilsky Pedagogical Institute (Ukraine)
Algimantas Sodeika, Univ. of Vilnius (Lithuania)

Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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