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Proceedings Paper

Detection of deep boron-involved thermal donor formation in silicon by combined photoluminescent, Hall, and ESR techniques
Author(s): V. M. Babich; Nicolay P. Baran; V. L. Kiritsa; Galina Yu. Rudko
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Paper Abstract

The low temperature photoluminescence technique applied together with Hall and ESR methods elucidated the variation of boron doping impurity behavior in Si:B under thermal annealing at 450 degree(s)C. It is shown that boron impurity p-Si is involved in the formation of electrically active complexes, namely, deep single-charge thermal donors.

Paper Details

Date Published: 20 April 1998
PDF: 4 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306229
Show Author Affiliations
V. M. Babich, Institute of Semiconductor Physics (Ukraine)
Nicolay P. Baran, Institute of Semiconductor Physics (Ukraine)
V. L. Kiritsa, Institute of Semiconductor Physics (Ukraine)
Galina Yu. Rudko, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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