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Proceedings Paper

Electroluminescent control technique of dislocation density in GaP
Author(s): Olexsandr M. Gontaruk; Dmytro V. Korbutyak; Anatoly P. Kudin; Volodimir I. Kuts; Yaroslav M. Olikh; Volodimir P. Tartachnik; Irina I. Tychina
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Paper Abstract

The effectiveness of radiative recombination of GaP light- diode structures, grown by means of epitaxial technique, is determined by deep nonradiative level concentration, which can be changed by irradiation of samples with fast particles or with the help of ultrasonic treatment. Variations of the nuclear particle doses and energies as well as ultrasonic waves allows to find optimal regimes for treatment of crystals, when the influence becomes positive, i.e., an increase in the light-diode quantum yield is observed. In the crystals treated by ultrasonic at low temperatures (77 degree(s) K) a luminescence intensity was found which are synchronous with those of current. The oscillations mentioned are likely to be caused by formation of mobile dislocation domains involved in the creation of dark lines and defects of dark spots. The work emphasizes a crucial role of dislocation networks in the formation of the fields of nonradiative recombination in an ultrasonic-treated sample bulk.

Paper Details

Date Published: 20 April 1998
PDF: 8 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306219
Show Author Affiliations
Olexsandr M. Gontaruk, Dragomanov Pedagogical Univ. (Ukraine)
Dmytro V. Korbutyak, Institute of Semiconductor Physics (Ukraine)
Anatoly P. Kudin, Dragomanov Pedagogical Univ. (Ukraine)
Volodimir I. Kuts, Institute of Nuclear Research (Ukraine)
Yaroslav M. Olikh, Institute of Semiconductor Physics (Ukraine)
Volodimir P. Tartachnik, Institute of Nuclear Research (Ukraine)
Irina I. Tychina, Dragomanov Pedagogical Univ. (Ukraine)

Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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