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Proceedings Paper

Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescence
Author(s): Vladimir G. Litovchenko; Dmytro V. Korbutyak; Sergiy G. Krylyuk; Holger T. Grahn; R. Klann; Klaus H. Ploog
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Paper Abstract

Temporal characteristics of the carriers recombination were investigated in different types of GaAs/AlAs superlattices by the time-resolved photoluminescence spectroscopy. The peculiarities of the electron-hole transitions were established for the superlattices studied in the dependence of the superlattice type and the width of quantum well and barrier layers. In particular, the conditions of existence of free and localized on the interface roughness excitons were found.

Paper Details

Date Published: 20 April 1998
PDF: 5 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306211
Show Author Affiliations
Vladimir G. Litovchenko, Institute of Semiconductor Physics (Ukraine)
Dmytro V. Korbutyak, Institute of Semiconductor Physics (Ukraine)
Sergiy G. Krylyuk, Institute of Semiconductor Physics (Ukraine)
Holger T. Grahn, Paul-Drude-Institut fuer Festkoerperelektronik (Germany)
R. Klann, Paul-Drude-Institut fuer Festkoerperelektronik (Germany)
Klaus H. Ploog, Paul-Drude-Institut fuer Festkoerperelektronik (Germany)

Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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