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Proceedings Paper

Self-heating as a tool for measuring sub-0.1-um silicon-on-insulator device parameters
Author(s): Mohamed A. Osman; Ashraf A. Osman
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Paper Abstract

SOI MOSFET device structures with SiO2/AlN composite back insulator with wide range thermal conductivity values were investigated. The proposed structures resulted in different amount of self-heating depending on the fraction of SiO2 in the back insulator. For a 0.8 micron FD-SOI MOSFET devices, increases in temperature from 23 C to 173 C for 1 milliwatt of power dissipation were obtained through numerical two dimensional device simulation. Additionally, simulation results show strong variation in mobility and generation current in devices with different back gate oxide composition. Similar structures could be used to determine the temperature dependence of transport parameters such as velocity overshoot, impact ionization rate, and other device parameters.

Paper Details

Date Published: 23 April 1998
PDF: 7 pages
Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); doi: 10.1117/12.306164
Show Author Affiliations
Mohamed A. Osman, Washington State Univ. (United States)
Ashraf A. Osman, Washington State Univ. (United States)

Published in SPIE Proceedings Vol. 3277:
Ultrafast Phenomena in Semiconductors II
Kong-Thon F. Tsen; Harold R. Fetterman, Editor(s)

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