Share Email Print

Proceedings Paper

Front-side-bombarded metal-plated CMOS electron sensors
Author(s): Hod Finkelstein; Ran Ginosar
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Electron detector arrays are employed in numerous imaging applications, from low-light-level imaging to astronomy, electron microscopy, and nuclear instrumentation. The majority of these detectors are fabricated with dedicated processes, use the semiconductor as a stopping and detecting layer, and utilize CCD-type charge transfer and detection. We present a new detector, wherein electrons are stopped by an exposed metal layer, and are subsequently detected either through charge collection in a CCD-type well, or by a measurement of a potential drop across a capacitor which is discharged by these electrons. Spatial localization is achieved by use of two metal planes, one for protecting the underlying gate structures, and another, with metal pixel structures, for 2D detection. The new deice doe not suffer from semiconductor non-uniformities, and blooming effects are minimized. It is effective for electrons with energies of 2-6 keV. The unique structure makes it possible to achieve a high fill factor, and to incorporate on-chip processing. An imaging chip implementing several test structures incorporating the new detector has been fabricated using a 2 micron double-poly double-metal process, and has been tested inside a JEOL 6400 electron microscope.

Paper Details

Date Published: 1 April 1998
PDF: 12 pages
Proc. SPIE 3301, Solid State Sensor Arrays: Development and Applications II, (1 April 1998); doi: 10.1117/12.304562
Show Author Affiliations
Hod Finkelstein, Technion--Israel Institute of Technology (Israel)
Ran Ginosar, Technion--Israel Institute of Technology (Israel)

Published in SPIE Proceedings Vol. 3301:
Solid State Sensor Arrays: Development and Applications II
Morley M. Blouke, Editor(s)

© SPIE. Terms of Use
Back to Top