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Proceedings Paper

Image formation properties of As40S20Se40 thin layers
Author(s): Alexander V. Stronski; Miroslav Vlcek; A. Sklenar; Peter E. Shepeljavi; Pavel F. Oleksenko; Tomas Wagner
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Paper Abstract

The present paper is concerned with investigations of image formation properties of As40S20Se40 thin layers. Spectral dependence of the refraction index n of variously treated samples was estimated from optical transmission in the spectral region 400-2500 nm. The n energy dependence of variously treated samples was fitted by the Wemple- DiDomenico dispersion relationship and used to estimate the single-oscillator model parameters. It was found, that exposure, as well as annealing leads to the increase in n values over the all investigated spectral region. Changes of the parameters of the single-oscillator model induced by treatment are discussed on the base of photo- and thermally- induced structural changes, which were directly confirmed by Raman scattering measurements. Such photoinduced structural changes provide good etching selectivity of As40S20Se40 layers in nonaqueous amine based solvents. The best obtained sensitivity values consisted of approximately 40 cm2/J. Surface relief patterns that were fabricated have good surface quality.Diffraction efficiency values of holographic diffraction gratings obtained on the base of As40S20Se40 layers consisted of 60-70 percent.

Paper Details

Date Published: 26 March 1998
PDF: 4 pages
Proc. SPIE 3294, Holographic Materials IV, (26 March 1998); doi: 10.1117/12.304529
Show Author Affiliations
Alexander V. Stronski, Institute of Semiconductor Physics (Ukraine)
Miroslav Vlcek, Univ. of Pardubice (Czech Republic)
A. Sklenar, Univ. of Pardubice (Czech Republic)
Peter E. Shepeljavi, Institute of Semiconductor Physics (Ukraine)
Pavel F. Oleksenko, Institute of Semiconductor Physics (Ukraine)
Tomas Wagner, Univ. of Pardubice (Czech Republic)

Published in SPIE Proceedings Vol. 3294:
Holographic Materials IV
T. John Trout, Editor(s)

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