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Proceedings Paper

High-performance GaAs homojunction far-infrared detectors
Author(s): A. G. Unil Perera; W. Z. Shen; Hui Chun Liu; Margaret Buchanan; William J. Schaff
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Paper Abstract

A high performance, bias tunable, p-GaAs homojunction interfacial workfunction internal photoemission far-IR detector has been demonstrated. A responsivity of 3.10 +/- 0.05 A/W, a quantum efficiency of 12.5 percent and a detectivity D* of 5.9 X 1010 cm (root) Hz/W, were obtained at 4.2K, for cutoff wavelengths from 80 to 100 micrometers . The bias dependences of quantum efficiency, detectivity, and cutoff wavelength have been measured and are well explained by the theoretical models, where the cutoff wavelength is modeled by a modified high density theory, and the quantum efficiency is predicted by scaling the free carrier absorption coefficient linearly with the doping concentration. The effect of the number of layers on detector performance and the uniformity of the detectors have been discussed. A comparison with Ge:Ga photoconductive detectors suggest that a similar or even better performance may be obtainable.

Paper Details

Date Published: 8 April 1998
PDF: 7 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304491
Show Author Affiliations
A. G. Unil Perera, Georgia State Univ. (United States)
W. Z. Shen, Georgia State Univ. (China)
Hui Chun Liu, National Research Council Canada (Canada)
Margaret Buchanan, National Research Council Canada (Canada)
William J. Schaff, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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