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Proceedings Paper

Epitaxial structures for reduced cooling of high-performance infrared detectors
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Paper Abstract

IR detectors are normally cooled to 80K or below to obtain the highest, background limited performance. We present results for indium antimonide/indium aluminium antimonide and mercury cadmium telluride detectors grown by epitaxial processes in order to facilitate high performance with reduced cooling requirements. The epitaxial growth enables structures to be grown which offer precise control of carrier generation and current leakage mechanisms so that the maximum temperature can be achieve din a photodiode operated in a conventional manner, near zero bias. These types of structure offer even greater operating temperature when reverse biased to suppress non-radiative generation mechanisms. The epitaxial growth also has advantages for conventional, 80K operation, which are described.

Paper Details

Date Published: 8 April 1998
PDF: 8 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304486
Show Author Affiliations
Tim Ashley, Defence Evaluation and Research Agency (United Kingdom)
Neil T. Gordon, Defence Evaluation and Research (United Kingdom)

Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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