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Proceedings Paper

Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and quantum dots
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Paper Abstract

The measurement of heterojunction band parameters and their spatial variation is of fundamental importance for the operation of heterostructure devices. Ballistic electron emission microscopy (BEEM) is a powerful, new low energy electron microscopy for imaging and spectroscopy of buried quantum objects and non-destructive local characterization of buried semiconductor heterostructures with nm resolution. We will present several new and novel applications of BEEM for semiconductor heterostructure characterization.

Paper Details

Date Published: 8 April 1998
PDF: 15 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304476
Show Author Affiliations
Venkatesh Narayanamurti, Univ. of California/Santa Barbara (United States)

Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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