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Proceedings Paper

Recent progress in GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths
Author(s): Zane A. Shellenbarger; Michael G. Mauk; Jeffrey A. Cox; Joseph South; Joseph D. Lesko; Paul E. Sims; Murzy D. Jhabvala; Marilyn K. Fortin
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Paper Abstract

Progress on mid-IR photodetectors fabricated by the liquid phase epitaxial growth of GaInAsSb and InAsSbP on GaSb and InAs substrates is reported. GaInAsSb p/n and p-i-n detectors and InAsSbP p/n detector structures were fabricated. Preliminary results indicate that these devices can have higher detectivity with lower cooling requirements than commercially available detectors in the same wavelength range. IR p/n junction detectors made from GaInAsSb and InAsSbP showed cut-off wavelengths of 2.3 micrometers and 2.9 micrometers respectively. Room temperature background noise- limited detectivity of 4 X 1010 cmHz1/2/W GaInAsSb detectors and 4 X 108 cmHz1/2/W for InAsSbP was measured.

Paper Details

Date Published: 8 April 1998
PDF: 8 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304474
Show Author Affiliations
Zane A. Shellenbarger, AstroPower, Inc. (United States)
Michael G. Mauk, AstroPower, Inc. (United States)
Jeffrey A. Cox, AstroPower, Inc. (United States)
Joseph South, AstroPower, Inc. (United States)
Joseph D. Lesko, AstroPower, Inc. (United States)
Paul E. Sims, AstroPower, Inc. (United States)
Murzy D. Jhabvala, NASA Goddard Space Flight Ctr. (United States)
Marilyn K. Fortin, NASA Goddard Space Flight Ctr. (United States)

Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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