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Proceedings Paper

Corrugated QWIP array fabrication and characterization
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Paper Abstract

A corrugated quantum well IR photodetector (C-QWIP) focal plane array (FPA) with cutoff at 11.2 micrometers has been fabricated and characterized. The C-QWIP array uses total internal reflection to couple normal incident light into the pixels. The processing steps involve only one chemical etching, one optional reactive ion etching, and one ohmic contact metalization. The detector array has 256 X 256 pixel elements, indium bumped to a direct injection readout circuit. The photocurrent to dark current ratio measured in this FPA, on which the noise equivalent temperature difference depends, is consistent with that of a large area test sample. The array shows good responsivity uniformity of 5.2 percent with no extra leakage resulted from array processing. The estimated noise equivalent temperature difference of this array, excluding the readout noise, is 17 mK at T equals 63 K. The fact that this FPA can be operated at a temperature similar to those of standard QWIP arrays with much shorter wavelengths shows that the C-QWIP structure can greatly increase array performance.

Paper Details

Date Published: 8 April 1998
PDF: 10 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304473
Show Author Affiliations
Kwong-Kit Choi, U.S. Army Research Lab. (United States)
Arnold C. Goldberg, U.S. Army Research Lab. (United States)
Naresh C. Das, Hughes STX (United States)
Murzy D. Jhabvala, NASA Goddard Space Flight Ctr. (United States)
Robert B. Bailey, Rockwell Science Ctr. (United States)
Kadri Vural, Rockwell Science Ctr. (United States)

Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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