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Proceedings Paper

The Bi/Bi1-xSbx multiquantum well structure
Author(s): Xinjian Yi; Xinyu Zhang; Yi Li; Jianhua Hao; Xing-Rong Zhao
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Paper Abstract

Bi/Bi1-xSbx multiquantum well structure has been grown by molecular beam epitaxy (MBE) on GaAs(001) substrate with a buffer layer of CdTe (111). The GaAs substrate was preheated at a temperature of 580 degrees C in the MBE chamber with vacuum of 10+10 torr for 10 minutes. The CdTe (111) buffer layer was grown with thickness of 300 nm at temperature of 280 degrees C. The Bi/Bi1-xSbx multilayer structure with x of 0.15, repeated 40 times, was grown at substrate temperature of 130 degrees C. As- deposited samples were characterized by reflection high- energy electron diffraction, x-ray diffraction analysis and high-resolution transmission electron microscopy (TEM), indicating a good epitaxial layer quality. The energy band model of the samples have been suggested for the first time.

Paper Details

Date Published: 8 April 1998
PDF: 4 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304472
Show Author Affiliations
Xinjian Yi, Huazhong Univ. of Science and Technology (China)
Xinyu Zhang, Huazhong Univ. of Science and Technology (China)
Yi Li, Huazhong Univ. of Science and Technology (China)
Jianhua Hao, Huazhong Univ. of Science and Technology (China)
Xing-Rong Zhao, Huazhong Univ. of Science and Technology (China)

Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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