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Proceedings Paper

High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2 um
Author(s): Raymond J. Menna; Dmitri Z. Garbuzov; Hao Lee; Ramon U. Martinelli; S. Yegna Narayan; John C. Connolly
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Paper Abstract

We review our recent progress in the design and operation of 2-micrometer InGaAsSb/AlGaAsSb quantum-well diode lasers. The devices have InGaAsSb quantum-well active regions and AlGaAsSb cladding layers, and all were grown lattice-matched to GaSb substrates using molecular-beam epitaxy. The broadened- waveguide (BW) design produces internal losses as low as 2 cm-1, which leads to external quantum efficiencies as high as 53%. Single-quantum-well lasers with 200-micrometer apertures and 2-mm-long cavities exhibit output powers of 1.9 W CW and 4 W quasi-CW. The lowest threshold current densities are 115 A/cm2. Small arrays of similar multi-quantum-well- diodes emit 10.6 W CW. The broadened-waveguide design should improve the performance of all mid-infrared diode lasers.

Paper Details

Date Published: 7 April 1998
PDF: 9 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304450
Show Author Affiliations
Raymond J. Menna, Sarnoff Corp. (United States)
Dmitri Z. Garbuzov, Sarnoff Corp. (United States)
Hao Lee, Sarnoff Corp. (United States)
Ramon U. Martinelli, Sarnoff Corp. (United States)
S. Yegna Narayan, Sarnoff Corp. (United States)
John C. Connolly, Sarnoff Corp. (United States)

Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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