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Proceedings Paper

Long-wavelength (15.5-um) quantum fountain intersubband laser InGaAs/AlGaAs quantum wells
Author(s): Olivier Gauthier-Lafaye; Francois H. Julien; Philippe Boucaud; Sebastien Sauvage; Jean-Michel Lourtioz; Veronique Thierry-Mieg; Richard Planel
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Paper Abstract

A new type of semiconductor unipolar laser operating in the mid-infrared spectral region, the Quantum Fountain intersubband laser, is demonstrated. It is based on optical pumping of a three-bound-state coupled quantum well structure in the GaAs/AlGaAs material system. The lasing transition occurs between the two excited states. Population inversion can be achieved by benefitting from LO-phonon resonance between the two lower subbands. The optical pumping scheme enables a simpler design of the active region than electrically pumped intersubband lasers. Moreover, because doped layers and metallic contacts are not necessary for the operation of the Quantum Fountain laser, free-carrier and plasmon absorptions can be minimised, thus allowing long- wavelength operation. Large optical gains are measured using pump-probe experiments with a free-electron laser. Lasing action under optical pumping by a pulsed CO2 laser has been achieved at a record long wavelength of 15.5 micrometer with an output peak power of the order of 0.6 W at low temperatures.

Paper Details

Date Published: 7 April 1998
PDF: 7 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304448
Show Author Affiliations
Olivier Gauthier-Lafaye, Univ. de Paris XI (France)
Francois H. Julien, Univ. de Paris XI (France)
Philippe Boucaud, Univ. de Paris XI (France)
Sebastien Sauvage, Univ. de Paris XI (France)
Jean-Michel Lourtioz, Univ. de Paris XI (France)
Veronique Thierry-Mieg, Lab. de Materiaux Macromoleculaires/CNRS (France)
Richard Planel, Lab. de Materiaux Macromoleculaires/CNRS (France)

Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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