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Proceedings Paper

AlGaInAs/InP ridge-guide lasers operating at 1.55 um
Author(s): Gary A. Evans; Jieh-Ping Sih; T. M. Chou; Jay B. Kirk; Jerome K. Butler; Lily Y. Pang
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Paper Abstract

The InGaAsP/InP material system has a large conduction band offset ((Delta) Ec equals 0.72 (Delta) Eg which provides strong electron confinement and prevents carrier overflow under high temperature operation. Therefore, AlGaInAs/InP lasers have better performance at high temperature operation.

Paper Details

Date Published: 7 April 1998
PDF: 6 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304443
Show Author Affiliations
Gary A. Evans, Southern Methodist Univ. (United States)
Jieh-Ping Sih, Southern Methodist Univ. (United States)
T. M. Chou, Southern Methodist Univ. (United States)
Jay B. Kirk, Southern Methodist Univ. (United States)
Jerome K. Butler, Southern Methodist Univ. (United States)
Lily Y. Pang, Texas Instruments (United States)

Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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