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Proceedings Paper

1.3-um InAsP/InAlGaAs MQW lasers for high-temperature operation
Author(s): Takayoshi Anan; Mitsuki Yamada; Keiichi Tokutome; Shigeo Sugou
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Paper Abstract

High quality strained InAsP was grown using gas-source molecular-beam-epitaxy (GSMBE) and the band structure was determined. The conduction band discontinuity ratio of InAsP/InP heterostructure was about 0.35, contrary to the reported value of 0.75. We proposed a new InAsP/InAlGaAs material system with type-I superlattice suitable for a high performance LD for 1.3-micrometer optical subscriber systems. The crystal quality was improved by introducing an InP spacer layer and the RTA process. High characteristic temperature of 143 K was achieved with this material system.

Paper Details

Date Published: 7 April 1998
PDF: 9 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304441
Show Author Affiliations
Takayoshi Anan, NEC Corp. (Japan)
Mitsuki Yamada, NEC Corp. (Japan)
Keiichi Tokutome, NEC Corp. (Japan)
Shigeo Sugou, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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