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Proceedings Paper

Optimum design of GaAs waveguides intersecting modulator
Author(s): Zhene Xu; Maria Rizzi; Beniamino Castagnolo
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Paper Abstract

An intersecting waveguide modulator which utilizes the carrier injection effects is presented and characterized. Using O+ implantation to render the implanted region electrically inactive, a well confined injection carrier channel is formed. This area can be driven to function as waveguide or as antiwaveguide. A transversal electrode switches the modulator from the on-state to the off-state or vice versa. At the base of carrier induced refractive index modeling and the finite difference beam propagation method, an optimum design modeling is given out to optimize the switch performance and to obtain the smallest injection current of this modulator.

Paper Details

Date Published: 15 March 1998
PDF: 9 pages
Proc. SPIE 3276, Miniaturized Systems with Micro-Optics and Micromechanics III, (15 March 1998); doi: 10.1117/12.302391
Show Author Affiliations
Zhene Xu, Politecnico di Bari (Italy)
Maria Rizzi, Politecnico di Bari (Italy)
Beniamino Castagnolo, Politecnico di Bari (Italy)

Published in SPIE Proceedings Vol. 3276:
Miniaturized Systems with Micro-Optics and Micromechanics III
M. Edward Motamedi; Rolf Goering, Editor(s)

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