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Proceedings Paper

Electron-beam lithography simulation for mask making: II. Comparison of the lithographic performance of PBS and EBR 900-M1
Author(s): Charles A. Sauer; David W. Alexander; Chris A. Mack
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Paper Abstract

Development of a maskmaking process using a new resist consists of a number of steps that take a great deal of time, effort, and resources before a finished process can be qualified. It would be useful early in the development cycle to model the expected performance of a new resist material prior to determining its suitability. Extracting the modeling parameters and predicting their influence on lithographic performance can also guide the subsequent development work that needs to be done to complete a manufacturing process. This paper compares two different resists and models the expected lithographic performance as a function of its development rate parameters. Resist dissolution rate measurements were done using two methods -- an in situ development rate monitor (DRM) and the classical mechanical (Dektak) method. ProDRM was used to extract the development rate parameters from the data. ProBEAM/3D was used to simulate electron-beam (e-beam) lithography using a 2D model. This paper explores the relationship between dose, develop time, spot size, and lithographic parameters such as critical dimension control and wall angle. Two resists, EBR900-M1 and PBS, are examined and compared using MEBESR 4500 and MEBES 4500S exposure parameters.

Paper Details

Date Published: 12 February 1997
PDF: 11 pages
Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); doi: 10.1117/12.301214
Show Author Affiliations
Charles A. Sauer, Etec Systems, Inc. (United States)
David W. Alexander, Etec Systems, Inc. (United States)
Chris A. Mack, FINLE Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 3236:
17th Annual BACUS Symposium on Photomask Technology and Management
James A. Reynolds; Brian J. Grenon, Editor(s)

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