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Proceedings Paper

Performance of a new high-NA scanned-laser mask lithography system
Author(s): Henry Chris Hamaker; Peter D. Buck
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Paper Abstract

To meet the challenges of peak production of 0.25-micrometer design rule photomasks, a new generation of scanned-laser reticle writers has been developed. Based on the architecture of the ALTA 3000, the resolution and critical dimension (CD) control have been improved by integrating a new 33X, 0.8- NA reduction lens. The spot size of 0.27-micrometer FWHM represents a reduction by a factor of 0.6 relative to preceding scanned-laser products, thereby providing excellent CD linearity down to 0.5 micrometer. High throughput is maintained by reducing the number of averaging passes from eight to four. The sharper aerial image produced by the system limits the CD biasing which may be obtained using dose adjustment, so a dry etch process with zero etch bias must be used for optimal performance. Early characterization of the system indicates performance consistent with that required for 0.25 micrometer integrated circuits.

Paper Details

Date Published: 12 February 1997
PDF: 13 pages
Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); doi: 10.1117/12.301205
Show Author Affiliations
Henry Chris Hamaker, Etec Systems, Inc. (United States)
Peter D. Buck, Etec Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 3236:
17th Annual BACUS Symposium on Photomask Technology and Management
James A. Reynolds; Brian J. Grenon, Editor(s)

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