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Proceedings Paper

Application of alternating phase-shifting masks to 140-nm gate patterning: linewidth control improvements and design optimization
Author(s): Hua-Yu Liu; Linard Karklin; Yao-Ting Wang; Yagyensh C. Pati
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Paper Abstract

In this paper we show that the problem of intrafield line width variations can be effectively solved through a novel application of alternating phase-shifting mask (PSM) technology. To illustrate its advantages, we applied this approach to produce 140 nm transistor gates using DUV (248 nm wavelength, KrF) lithography. We show that: systematic intrafield line width variations can be controlled to within 10 nm (3 (sigma) ), and variations across the wafer held to within 15 nm (3 (sigma) ), with a target k1 factor of K1 equals 0.237 (140 nm target gate lengths).

Paper Details

Date Published: 12 February 1997
PDF: 10 pages
Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); doi: 10.1117/12.301204
Show Author Affiliations
Hua-Yu Liu, Hewlett-Packard Co. (United States)
Linard Karklin, Numerical Technologies, Inc. (United States)
Yao-Ting Wang, Numerical Technologies, Inc. (United States)
Yagyensh C. Pati, Numerical Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 3236:
17th Annual BACUS Symposium on Photomask Technology and Management
James A. Reynolds; Brian J. Grenon, Editor(s)

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