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Proceedings Paper

Quantum approach to vapor phase growth mechanism of diamond film
Author(s): Guang-Pu Wei; Takashi Kita; H. Hakayama; Taneo Nishino
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Paper Abstract

The growth mechanism of diamond films from low pressure vapor phase synthesis cannot be illustrated with classical thermodynamic theory. Up to now, a lot of growth methods were reported, but the growth mechanism was not so clear. In this paper, a variety of growth methods and growth conditions were summarized, and some tries to illustrate the growth mechanism of diamond film from the consideration of quantum mechanics bond theory were carried out. Particularly, some effects of atomic H and SP3 bond on the growth mechanism of diamond film were illustrated.

Paper Details

Date Published: 20 February 1998
PDF: 5 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300730
Show Author Affiliations
Guang-Pu Wei, Shanghai Univ. of Science and Technology (China)
Takashi Kita, Kobe Univ. (Japan)
H. Hakayama, Kobe Univ. (Japan)
Taneo Nishino, Kobe Univ. (Japan)

Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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