Proceedings Paper
Oxidized characteristics of hydrogenated nanocrystalline silicon| Format | Member Price | Non-Member Price |
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Paper Abstract
The hydrogenated nano-crystalline silicon (nc-Si:H) films are prepared using conventional plasma enhanced chemical-vapor- deposition (PECVD) system and oxidized by plasma and high- temperature treatment which all doped oxygen into nc-Si:H film. The contents of hydrogen and oxygen, the infrared absorption spectra, photo-luminescence (PL) spectra are measured. The PL peak wavelengths blue-shift from 695 nm to 660 nm at 77 K, but there are still no obvious visible PL at room-temperature through oxidized post-processing. The bonded forms of oxygen in nc-Si:H are changed with different oxidized way and their influence on PL spectra are also investigated.
Paper Details
Date Published: 20 February 1998
PDF: 4 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300728
Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)
PDF: 4 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300728
Show Author Affiliations
Ming Liu, Beijing Univ. of Aeronautics and Astronautics (China)
Hongfei Dou, Beijing Univ. of Aeronautics and Astronautics (China)
Hongfei Dou, Beijing Univ. of Aeronautics and Astronautics (China)
Yuliang L. He, Beijing Univ. of Aeronautics and Astronautics (China)
Xinliu Jiang, Beijing Univ. of Aeronautics and Astronautics (China)
Xinliu Jiang, Beijing Univ. of Aeronautics and Astronautics (China)
Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)
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