Proceedings Paper
128X1 GaAs/AlGaAs multiple quantum well infrared detector array| Format | Member Price | Non-Member Price |
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Paper Abstract
A long-wavelength 128 by 1 GaAs/AlGaAs multiple quantum wells (MQWs) infrared detector (IRD) array is presented. A good photo-current responsibility Rp equals 2.02 X 106V/W is obtained with the cut-off wavelength being (lambda) c equals 8.6 micrometer and as a result, we obtain a good remanent heat image of a room-temperature subject.
Paper Details
Date Published: 20 February 1998
PDF: 3 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998);
Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)
PDF: 3 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998);
Show Author Affiliations
Mingfang Wan, Shanghai Institute of Technical Physics (China)
Haijiang Ou, Shanghai Institute of Technical Physics (China)
Xingquan Liu, Shanghai Institute of Technical Physics (China)
Xiaoshuang Chen, Shanghai Institute of Technical Physics (China)
Ning Li, Shanghai Institute of Technical Physics (China)
Haijiang Ou, Shanghai Institute of Technical Physics (China)
Xingquan Liu, Shanghai Institute of Technical Physics (China)
Xiaoshuang Chen, Shanghai Institute of Technical Physics (China)
Ning Li, Shanghai Institute of Technical Physics (China)
Wei Lu, Shanghai Institute of Technical Physics (China)
Shuechu Shen, Shanghai Institute of Technical Physics (China)
Wenxin Wang, Institute of Physics (China)
Yi Huang, Institute of Physics (China)
Junming Zhou, Institute of Physics (China)
Shuechu Shen, Shanghai Institute of Technical Physics (China)
Wenxin Wang, Institute of Physics (China)
Yi Huang, Institute of Physics (China)
Junming Zhou, Institute of Physics (China)
Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)
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