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Proceedings Paper

Impurity process in ZnCdSe/ZnSe multiple quantum wells
Author(s): Guangyou Yu; Xiwu Fan; Jiying Zhang; Baojun Yang; Zhuhong Zheng; Xiaowei Zhao; Dezheng Shen; Youming Lu; Zhenping Guan
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Paper Abstract

At high excitation intensity the photoluminescence (PL) spectra of ZnCdSe/ZnSe multiple quantum wells were studied, which showed strong excitonic emission and a broad emission band at low energy side. The dependence of the broad emission band on excitation intensity shoed obviously that the broad emission band is related to impurity. In time resolved luminescence spectra, with increasing the delay times (ns), the broad emission band shifts to low energy side and full width at half maximum decreased, which showed the typical characteristic of donor-acceptor pairs (DAP) emission. And then, the reason that the excitonic emission peak and the DAP band decay with same speed was discussed and it was attributed to the free carriers relax effect.

Paper Details

Date Published: 20 February 1998
PDF: 3 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300718
Show Author Affiliations
Guangyou Yu, Changchun Institute of Physics (China)
Xiwu Fan, Changchun Institute of Physics (China)
Jiying Zhang, Changchun Institute of Physics (China)
Baojun Yang, Changchun Institute of Physics (China)
Zhuhong Zheng, Changchun Institute of Physics (China)
Xiaowei Zhao, Changchun Institute of Physics (China)
Dezheng Shen, Changchun Institute of Physics (China)
Youming Lu, Changchun Institute of Physics (China)
Zhenping Guan, Changchun Institute of Physics (China)

Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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