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Proceedings Paper

Preparation and short-wavelength optical storage properties of Ge-Te alloy phase change thin film
Author(s): Huiyong Liu; Fusong S. Jiang; Liqiu Q. Men; Zhengxiu Fan; Fuxi Gan
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Paper Abstract

The preparation method and short-wavelength optical storage properties of Ge-Te alloy phase change thin film are reported. The film was prepared by rf-sputtering technology. The deposited films were amorphous. The crystallization temperature was 190 degrees Celsius. The optical spectrum measurements showed that the reflectivity of the crystalline state film was rather high -- about 50% at 780 nm, which may be suitable for CD-E storage medium. A static optical recording tester with a focused Argon laser beam (514.5 nm) irradiating on the films was used to evaluate the optical storage performance of the films. The results showed that a rather large reflectivity contrast (larger than 15%) can be obtained at low power beam.

Paper Details

Date Published: 20 February 1998
PDF: 4 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300711
Show Author Affiliations
Huiyong Liu, Shanghai Institute of Optics and Fine Mechanics (China)
Fusong S. Jiang, Shanghai Institute of Optics and Fine Mechanics (China)
Liqiu Q. Men, Shanghai Institute of Optics and Fine Mechanics (China)
Zhengxiu Fan, Shanghai Institute of Optics and Fine Mechanics (China)
Fuxi Gan, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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