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Proceedings Paper

Preparation and physical properties of MoO3 thin films
Author(s): Muhammad Yahaya; M. M. Salleh; Ibrahim A. Talib; Norkamisah Mohd Nor
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Paper Abstract

Thin films of MoO3 were prepared by electron beam evaporation technique. The films were deposited onto glass substrates maintained at temperatures in the range 100 - 250 degrees Celsius. The films were characterized by studying their structure, electrical and optical properties. The films formed at 100 degrees Celsius are amorphous with conductivity of about 2.5 X 10-5 (Omega) -1 cm-1. The effect of deposition temperature on the properties of the films were studied and discussed.

Paper Details

Date Published: 20 February 1998
PDF: 5 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300703
Show Author Affiliations
Muhammad Yahaya, Univ. Kebangsaan Malaysia (Malaysia)
M. M. Salleh, Univ. Kebangsaan Malaysia (Malaysia)
Ibrahim A. Talib, Univ. Kebangsaan Malaysia (Malaysia)
Norkamisah Mohd Nor, Univ. Kebangsaan Malaysia (Malaysia)

Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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