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Proceedings Paper

Luminescent Ge nanocrystallites embedded in a-SiO2 films
Author(s): Zhenhong He; Kun-Ji Chen; Jun Xu; Duan Feng; He Xiang Han; Zhao-Ping Wang
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Paper Abstract

The luminescent nanocrystal Ge embedded in a-SiO2 matrix was prepared by thermal oxidation of a-Si1-xGex:H films under conventional conditions. It was found that nc-Ge were formed through the selective oxidation of Si in a-GexSi1-x:H alloys and precipitation of Ge during oxidation. The average size of nc-Ge changed from 4 nm to 6 nm with the various conditions and Ge contents. Visible photoluminescence with peak energy 2.2 eV was observed from the oxidized samples where the nc-Ge have an average size of 4 nm. In order to control the size distribution of nc-Ge, we used multilayer films of a-Si:H/a-Si1-xGex:H instead of unlayered a-Si1-xGex:H alloy films to prepare nc-Ge embedded in SiO2 matrix. We found that the size of nc-Ge in perpendicular direction can be well confined by the SiO2 sublayers simultaneously formed.

Paper Details

Date Published: 20 February 1998
PDF: 5 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300692
Show Author Affiliations
Zhenhong He, Nanjing Univ. (China)
Kun-Ji Chen, Nanjing Univ. (China)
Jun Xu, Nanjing Univ. (China)
Duan Feng, Nanjing Univ. (China)
He Xiang Han, Institute of Semiconductors (China)
Zhao-Ping Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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