
Proceedings Paper
Preparation and characterization of the quantum dot quantum well system CdS/CuS/CdSFormat | Member Price | Non-Member Price |
---|---|---|
$17.00 | $21.00 |
Paper Abstract
The synthesis and the characterization of the quantum dot quantum well (QDQW) system are described. The chemical synthesis and substitution method are used to synthesize the three-layered structure compound CdS/CuS/CdS which consists of a core of the CdS nanocrystal and a well of monolayers of CuS capped by monolayers of CdS acting as the outermost shell. The results of inductive coupled plasma mass spectroscopy (ICP-MS) measurement and the absorption spectra confirm the formation of the three-layered system CdS/CuS/CdS.
Paper Details
Date Published: 20 February 1998
PDF: 5 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300681
Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)
PDF: 5 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300681
Show Author Affiliations
Hongming Chen, Nanjing Univ. (China)
Xinfan Huang, Nanjing Univ. (China)
Hong-Bin Huang, Nanjing Univ. (China)
Ling Xu, Nanjing Univ. (China)
Xinfan Huang, Nanjing Univ. (China)
Hong-Bin Huang, Nanjing Univ. (China)
Ling Xu, Nanjing Univ. (China)
Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)
© SPIE. Terms of Use
