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Proceedings Paper

Diamond film improvement on WC-Co substrate by sputtering interface
Author(s): Xianchang He; Hesheng Shen; Zhiming Zhang; Shenghua Li
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Paper Abstract

To enhance the adhesion of diamond film on WC-Co substrate, interface of TiC and SiC by sputtering technique were introduced between them. The film structure and surface morphology have been checked by x-ray diffraction, Raman spectroscopy and SEM. The adhesion between both coating and substrate have been evaluated by cutting test. In addition, the vertical tensile test has been carried out to measure the adhesion strength, which indicated that the introduce of the interface layer played important effect for improvement of the film adhesion strength.

Paper Details

Date Published: 20 February 1998
PDF: 4 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300665
Show Author Affiliations
Xianchang He, Shanghai Jiaotong Univ. (China)
Hesheng Shen, Shanghai Jiaotong Univ. (China)
Zhiming Zhang, Shanghai Jiaotong Univ. (China)
Shenghua Li, Shanghai Jiaotong Univ. (China)

Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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