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Proceedings Paper

1.55-um InP-based monolithically integrated multichannel photoreceiver arrays
Author(s): Pallab Bhattacharya; Kao-Chih Syao; Augusto Gutierrez-Aitken
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Paper Abstract

We have investigated the performance characteristics of InP- based 1.55 micrometer single and multi-channel photoreceiver arrays consisting of a front-end p-i-n photodiode and a 3- stage HBT-based transimpedance amplifier and realized by single-step epitaxy. The single-channel photoreceiver circuits are characterized by an optical bandwidth of 20 GHz and transimpedance gain of 46 dB(Omega) . Sixteen-channel arrays, made with the same circuit, demonstrate individual channel bandwidth of 11 GHz. By using a novel monolithically integrated radiation shield, we have been able to reduce the crosstalk to minus 35 dB at 11 GHz. These parameters represent the best performance in multi-channel integrated photoreceiver arrays. We have performed an electromagnetic full-wave solution of the array, which shows that the measured crosstalk in arrays without the radiation shield could be dominated by radiation crosstalk. The magnitude of the electrical crosstalk in the arrays has also been determined. These results are presented and discussed.

Paper Details

Date Published: 22 December 1997
PDF: 6 pages
Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997); doi: 10.1117/12.298249
Show Author Affiliations
Pallab Bhattacharya, Univ. of Michigan (United States)
Kao-Chih Syao, Univ. of Michigan (United States)
Augusto Gutierrez-Aitken, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 3290:
Optoelectronic Integrated Circuits II
Shih-Yuan Wang; Yoon-Soo Park, Editor(s)

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