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Proceedings Paper

Visible electroluminescence in Si/adsorbed gas superlattice
Author(s): Raphael Tsu; Qi Zhang; Adam Filios
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Paper Abstract

We report a strong and extremely stable electroluminescence (EL) from silicon based EL device. The active layer of the device utilizes a crystalline Si/O superlattice, grown by molecular beam epitaxy with in-situ oxygen exposure. Oxygen exposure is used to limit the growth of oxides to a monolayer in order to continue the silicon epitaxial growth and to create a highly localized interaction between the oxygen and silicon atoms. The visible EL is peaked at 1.8 - 2 eV, showing no degradation in a six month life-test under continuous operation, longer than other silicon based schemes in the literature. The efficacy of both photoluminescence and electroluminescence is similar to better than that from porous silicon. The robustness and stability of the c-Si/O superlattice opens the door for a silicon chip combining IC with integrated optics.

Paper Details

Date Published: 22 December 1997
PDF: 11 pages
Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997); doi: 10.1117/12.298247
Show Author Affiliations
Raphael Tsu, Univ. of North Carolina/Charlotte (United States)
Qi Zhang, Univ. of North Carolina/Charlotte (United States)
Adam Filios, Univ. of North Carolina/Charlotte (United States)

Published in SPIE Proceedings Vol. 3290:
Optoelectronic Integrated Circuits II
Shih-Yuan Wang; Yoon-Soo Park, Editor(s)

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