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Proceedings Paper

1.55-um laser diodes with leaky waveguide structure
Author(s): Jingchang Zhong; Yingjie Zhao; Ronghui Li
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Paper Abstract

We have satisfactorily designed and prepared a gain-guided high-power 1.55 micrometer leaky waveguide semiconductor laser structure on the basis of considering the laser loss mechanisms such as auger electron recombination, carrier leakage over the heterobarrier, inter-valence-band absorption, etc. It was grown by a unique liquid phase epitaxy (LPE) and was modified by growing an intrinsic InGaAsP waveguiding layer between the active layer and lower confinement layer and provided a higher temperature stability than that of conventional lasers. Using the leaky waveguide structure, we have obtained 1.55 micrometer laser diodes with threshold currents comparable to common lasers (Jthe less than or equal to 2.5 KA/cm2) but with the characteristic temperature TO near to those of GaAs-AlGaAs lasers (142 K). Especially, we have obtained the peak output power up to higher than 2 W per facet in pulsed operation at room temperature.

Paper Details

Date Published: 14 November 1997
PDF: 4 pages
Proc. SPIE 3241, Smart Materials, Structures, and Integrated Systems, (14 November 1997); doi: 10.1117/12.293482
Show Author Affiliations
Jingchang Zhong, Changchun Institute of Optics and Fine Mechanics (China)
Yingjie Zhao, Changchun Institute of Optics and Fine Mechanics (China)
Ronghui Li, Changchun Institute of Optics and Fine Mechanics (China)

Published in SPIE Proceedings Vol. 3241:
Smart Materials, Structures, and Integrated Systems
Alex Hariz; Vijay K. Varadan; Olaf Reinhold, Editor(s)

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