Share Email Print

Proceedings Paper

Using a SiC injector in a polydeposition system to improve mean time between failure
Author(s): Judith B. Barker; Brian Izzio
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The SiH4 gas injectors were having a problem with early breakage in vertical polysilicon deposition furnaces. The quartz tube employed in some vertical thermal reactors uses a quartz injector to deliver process gas to the bottom zone of the furnace. This injector extends down from the top dome of the quartz tube. Polysilicon deposition occurs on the inner and outer surfaces of the injector. The difference in the coefficient of expansion between the silicon and quartz in conjunction with the normal temperature gradients seen in the furnace results in unpredictable injector breakage. The authors provided the initial concept for a removable injector and worked with a quartzware and silicon carbide supplier to develop the injector design from silicon carbide (SiC). Silicon carbide has a comparable thermal expansion coefficient compared with polysilicon thereby eliminating the possibility of early injector breakage. The strength, purity and extensive usage of silicon carbide in the semiconductor industry made SiC an ideal candidate as an injector.

Paper Details

Date Published: 25 August 1997
PDF: 4 pages
Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); doi: 10.1117/12.284638
Show Author Affiliations
Judith B. Barker, Motorola (United States)
Brian Izzio, Motorola (United States)

Published in SPIE Proceedings Vol. 3213:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III
Abe Ghanbari; Anthony J. Toprac, Editor(s)

© SPIE. Terms of Use
Back to Top