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Proceedings Paper

Modeling of OES data to estimate etch rate for etching equipment
Author(s): Yi Cheng; Richard J. Markle; Joe Qin; Thomas F. Edgar; Michael J. Gatto; Chris Nauert
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Paper Abstract

Optical emission spectroscopy (OES) data for 495 wavelengths and wafer measurements (pre- and post-oxide film thickness) from a commercial etch tool were collected for 18 oxide wafers to explore the feasibility of using OES as an in-situ sensor to estimate average oxide etch rate. A variable selection method is proposed based on the principle of partial least square (PLS) regression, which select several most informative wavelengths to build ordinary least square (OLS) regression models. Compared with the PLS models, it is found that OLS regression models based on selected wavelengths are more robust.

Paper Details

Date Published: 25 August 1997
PDF: 11 pages
Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); doi: 10.1117/12.284627
Show Author Affiliations
Yi Cheng, Univ. of Texas at Austin (United States)
Richard J. Markle, Advanced Micro Devices, Inc. (United States)
Joe Qin, Univ. of Texas at Austin (United States)
Thomas F. Edgar, Univ. of Texas at Austin (United States)
Michael J. Gatto, Advanced Micro Devices, Inc. (United States)
Chris Nauert, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 3213:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III
Abe Ghanbari; Anthony J. Toprac, Editor(s)

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