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Proceedings Paper

Process optimization of dual-gate CMOS
Author(s): I. Min Liu; Yuh Yue Chen; Chris Connor; Atul B. Joshi; Dim-Lee Kwong
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Paper Abstract

In this paper, we study and compare dual-gate CMOS devices fabricated with various processes such as standard or NO- nitrided gate oxides, polycrystalline or amorphous silicon gates, boron or BF2 implantation for p+-poly and S/D formation, and different drive-in conditions. It is found that NO nitridation of gate oxides can improve device performance for short channel PMOSFETs over control SiO2. However, pile-up of boron in nitrided gate oxides may degrade gate oxide reliability in PMOS devices. Amorphous silicon gates can effectively prevent boron penetration into gate oxides at a cost of aggravated poly-depletion effects. When BF2 implantation is used for p+-poly formation, fluorine improves the resistance of SiO2/Si interfaces to hot-carrier stress but it enhances boron diffusion in gate oxides. The process optimization of dual-gate CMOS regarding device performance and hot-carrier reliability is systematically studied.

Paper Details

Date Published: 27 August 1997
PDF: 8 pages
Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284621
Show Author Affiliations
I. Min Liu, Univ. of Texas/Austin (United States)
Yuh Yue Chen, Univ. of Texas/Austin (United States)
Chris Connor, Univ. of Texas/Austin (United States)
Atul B. Joshi, Rockwell Semiconductor Systems (United States)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 3212:
Microelectronic Device Technology
Mark Rodder; Toshiaki Tsuchiya; David Burnett; Dirk Wristers, Editor(s)

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