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Proceedings Paper

Characteristics of BaxSr1-xTiO3 thin films by metallorganic chemical vapor deposition for ultrahigh-density DRAM application
Author(s): Bigang Min; Jaesung Sung Roh; J. Yan; Dim-Lee Kwong
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Paper Abstract

The characteristics of BST thin films prepared on Pt/SiO2/Si substrates by MOCVD were investigated. The films were deposited with various flow ratios and temperatures. The dielectric constant ((epsilon) r) was found to initially increase with increasing Ba/(Ba+Sr) flow ratio, reach to the maximum value ((epsilon) r equals 184) at the flow ratio of 0.3, and then rapidly decrease with further increasing the flow ratio. No crystalline BST peak was observed in the films deposited with lower flow ratio than 0.3, while secondary BaCO3 peaks were observed in those with higher flow ratio. It indicates that why maximum (epsilon) r was achieved in the films with intermediate flow ratio. The BaCO3 phase was disappeared in the BST films with the increase of deposition temperature. A two-step deposition method was proposed to improve (epsilon) r (equals195) as well as surface morphology. However, it degraded leakage current of the films due to increased grain boundary area. Post annealing in O2 ambient could reduce the leakage current, although an excessive oxidation reduced (epsilon) r.

Paper Details

Date Published: 27 August 1997
PDF: 8 pages
Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284612
Show Author Affiliations
Bigang Min, The Univ. of Texas at Arlington (United States)
Jaesung Sung Roh, LG Semicon Co., Ltd. (South Korea)
J. Yan, The Univ. of Texas at Austin (United States)
Dim-Lee Kwong, The Univ. of Texas at Austin (United States)

Published in SPIE Proceedings Vol. 3212:
Microelectronic Device Technology
Mark Rodder; Toshiaki Tsuchiya; David Burnett; Dirk Wristers, Editor(s)

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