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Proceedings Paper

Nitrogen implantation: reverse short channel effects improvement and its drawbacks
Author(s): Teck Koon Lee; Yiang Aun Nga; Po-Ching Liu; Chock Hing Gan; Yunqiang Zhang
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Paper Abstract

In this paper, the effects of implanting nitrogen ions (N+) into the channel and source/drain/poly-silicon gate (poly-Si) regions on transistor characteristics are investigated. It was found that the use of N+ implantation into the channel reduces the reverse short channel effects (RSCE) tremendously. However, threshold voltage shifts of both n-ch an p-ch devices were observed. The thinning of the field oxide due to the extra N+ implantation was also seen. We attribute these threshold voltage shifts to the partial activation of the implanted nitrogen ions. When N+ were implanted into the source/drain/poly-Si regions, it was found that the roll-off of the n-ch devices and p+/n-well junction leakage current was degraded. We propose that these are due to the thinning of the field oxide at the bird's beak and to the partial activation of the implanted N+. It was found that there was no degradation in the n+/p-well junction leakage current which is consistent with the proposed mechanism.

Paper Details

Date Published: 27 August 1997
PDF: 8 pages
Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284605
Show Author Affiliations
Teck Koon Lee, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Yiang Aun Nga, Nanjing Institute of Electronic Devices (Singapore)
Po-Ching Liu, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Chock Hing Gan, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Yunqiang Zhang, Nanjing Institute of Electronic Devices (Singapore)

Published in SPIE Proceedings Vol. 3212:
Microelectronic Device Technology
Mark Rodder; Toshiaki Tsuchiya; David Burnett; Dirk Wristers, Editor(s)

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