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Proceedings Paper

Bulk-micromachined pressure sensor based on epi-poly techniques
Author(s): Paul T. J. Gennissen; Colin M. A. Ashruf; Martijn Kaak; Patrick J. French; Pasqualina M. Sarro
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Paper Abstract

This paper presents the development of a pressure sensor based on epi-poly processing technology. The use of epi-poly creates an SOI structure and thus facilitates the use of an oxide etch-stop for the bulk micromachining. This avoids the requirement for the complicated electrochemical techniques. This simplification of the process greatly enhances the batch fabrication capabilities. Furthermore, the epi-poly deposition can be performed at the same time as the standard epitaxy used for the electronics. By defining the oxide layer only where a membrane is required, all other areas of the chip can be used for the fabrication of the read-out electronics. Etching from the back of the wafer, to define the membrane, is performed after completion of the bipolar processing. This etching is performed in KOH or TMAH which has a high etch selectivity over the oxide layer. This paper presents the fabrication and initial measurement results of the epi-poly pressure sensor.

Paper Details

Date Published: 5 September 1997
PDF: 8 pages
Proc. SPIE 3224, Micromachined Devices and Components III, (5 September 1997); doi: 10.1117/12.284518
Show Author Affiliations
Paul T. J. Gennissen, Delft Univ. of Technology (Netherlands)
Colin M. A. Ashruf, Delft Univ. of Technology (Netherlands)
Martijn Kaak, Hogeschool van Utrecht (Netherlands)
Patrick J. French, Delft Univ. of Technology (Netherlands)
Pasqualina M. Sarro, Delft Univ. of Technology (Netherlands)

Published in SPIE Proceedings Vol. 3224:
Micromachined Devices and Components III
Kevin H. Chau; Patrick J. French, Editor(s)

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