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Proceedings Paper

Does tris-(8-hydroxyquinolinato) aluminum transport holes?
Author(s): Liang-Bih Lin; Ralph H. Young; David S. Weiss; Samson A. Jenekhe; Paul M. Borsenberger
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Paper Abstract

Hole transporting properties of tris-(8-hydroxyquinolinato) aluminum (Alq) were investigated using time-of-flight (TOF) photocurrent transients and photoinduced discharge techniques. A thin layer of Alq was inserted between two hole transporting layers. Within the time domain of the photocurrent transients,the fraction of holes escaping from one side of the Alq layer to the other side is strongly field, temperature, and Alq thickness dependent. The results of photoinduced discharge experiments indicate that eventually the holes escaped the trilayer samples. The injection barrier is estimated to be approximately 0.12 eV. The hole penetration range is estimated to be 10-30 angstrom in the range of field strengths studied, therefore suggesting the recombination zone of electrons and holes in Alq-containing electroluminescent (EL) devices is confined close to the interface of Alq and the hole transporting layer. The results demonstrate the importance of the hole injection barriers and hole trapping to the performance of organic EL devices using Alq as the electron transporting and emissive layer.

Paper Details

Date Published: 1 December 1997
PDF: 7 pages
Proc. SPIE 3148, Organic Light-Emitting Materials and Devices, (1 December 1997); doi: 10.1117/12.284176
Show Author Affiliations
Liang-Bih Lin, Univ. of Rochester and Eastman Kodak Co. (United States)
Ralph H. Young, Univ. of Rochester and Eastman Kodak Co. (United States)
David S. Weiss, Univ. of Rochester and Eastman Kodak Co. (United States)
Samson A. Jenekhe, Univ. of Rochester (United States)
Paul M. Borsenberger, Univ. of Rochester and Eastman Kodak Co. (United States)

Published in SPIE Proceedings Vol. 3148:
Organic Light-Emitting Materials and Devices
Zakya H. Kafafi, Editor(s)

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