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Proceedings Paper

84-GHz source generated from a mode-locked semiconductor-laser-pumped HEMT
Author(s): Kalin Spariosu; Vladimir A. Manasson; Lev S. Sadovnik; Robert M. Mino; Dipen Bhattacharya; Mohammed Ershad Ali; Harold R. Fetterman
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Paper Abstract

The generation of 84 GHz radiation was demonstrated using a mode-locked semiconductor laser (MLSL) pumped heterojunction bipolar transistor (HBT). The passively mode-locked MLSL was biased appropriately utilizing two diode laser drivers (current sources). Mode-locked behavior was achieved in a colliding pulse mode, resulting in a pulse repetition rate frequency of approximately equals 84 GHz. The mode-locked behavior was confirmed by utilizing both an interferometer-based correlation measurement and an optical spectrum analyzer. The MLSLO was then used to pump an HBT that was specially designed for optical pumping (a 10 mm X 10 mm window was fabricated in the HBT), allowing efficient optical excitation of the device. HBT-radiated MMW signals as high as 20 dB (above the noise floor) were achieved at approximately equals 84 GHz.

Paper Details

Date Published: 23 October 1997
PDF: 9 pages
Proc. SPIE 3160, Optical Technology for Microwave Applications VIII, (23 October 1997); doi: 10.1117/12.283936
Show Author Affiliations
Kalin Spariosu, Physical Optics Corp. (United States)
Vladimir A. Manasson, WaveBand Corp. (United States)
Lev S. Sadovnik, WaveBand Corp. (United States)
Robert M. Mino, WaveBand Corp. (United States)
Dipen Bhattacharya, Univ. of California/Los Angeles (United States)
Mohammed Ershad Ali, Univ. of California/Los Angeles (United States)
Harold R. Fetterman, Univ. of California/Los Angeles (United States)

Published in SPIE Proceedings Vol. 3160:
Optical Technology for Microwave Applications VIII
Anastasios P. Goutzoulis, Editor(s)

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