The disadvantages of traditional methods of edge grinding silicon wafers are discussed. With the industry's move to 300 mm format wafers, comes the pressure of environmental issues to minimize acid etch from the wafer process which is commonly used to improve surface finish and reduce sub surface damage. The recent work of Cranfield Precision in wafer edge processing is described, together with descriptions of a new grinding process and machine to eliminate grinding induced damage and minimize the polishing time.

Date Published: 24 September 1997
PDF: 13 pages
Proc. SPIE 3099, Micro-optical Technologies for Measurement, Sensors, and Microsystems II and Optical Fiber Sensor Technologies and Applications, (24 September 1997); doi: 10.1117/12.281243

Published in SPIE Proceedings Vol. 3099:
Micro-optical Technologies for Measurement, Sensors, and Microsystems II and Optical Fiber Sensor Technologies and Applications
Olivier M. Parriaux; Ernst-Bernhard Kley; Brian Culshaw; Magnus Breidne, Editor(s)