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Proceedings Paper

Uniform stress effect on initial stages of oxygen precipitation in Czochralski-grown silicon
Author(s): Andrzej Misiuk
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Paper Abstract

Uniform stress effect on initial stages of oxygen precipitation in Cz-Si annealed at (870 - 1000) K under argon pressure, HP, up to 109 Pa was investigated by FTIR, x- ray, selective etching and electrical methods. Cz-Si samples subjected to nucleation treatment were subsequently annealed at (1230 - 1400) K - 105 Pa to check an effect of nucleation under HP on oxygen precipitation. Enhanced HP during nucleation influences kinetics of thermal donor creation, enlarges oxygen precipitation and concentration of oxygen-related defects. HP-induced phenomena are discussed in terms of decreased oxygen diffusion and of enhanced misfit at oxygen cluster/Si matrix boundary with activation of 'additional' nucleation centers for oxygen precipitation.

Paper Details

Date Published: 14 July 1997
PDF: 8 pages
Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); doi: 10.1117/12.280740
Show Author Affiliations
Andrzej Misiuk, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 3178:
Solid State Crystals: Growth and Characterization
Jozef Zmija; Andrzej Majchrowski; Jaroslaw Rutkowski; Jerzy Zielinski, Editor(s)

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