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Proceedings Paper

Growth of GaSb single crystals with low carrier concentration
Author(s): Bedrich Stepanek; Vera Sestakova; Jaroslav Sestak
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Paper Abstract

The GaSb single crystals were grown under the flow of ionized hydrogen atmosphere using the Czochralski method without encapsulant. From the results it seems to be very likely that donors are passivated more than acceptors what was confirmed by the growth of low Te-doped GaSb. The crystals showed p-type conductivity in the whole volume and the free carriers concentration was almost homogeneous from the top to the bottom of the GaSb boule (1.8 - 2.3 multiplied by 1016 cm-3). We suppose that an equilibrium between passivated donors and active donors has been established.

Paper Details

Date Published: 14 July 1997
PDF: 4 pages
Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); doi: 10.1117/12.280706
Show Author Affiliations
Bedrich Stepanek, Institute of Physics (Czech Republic)
Vera Sestakova, Institute of Physics (Czech Republic)
Jaroslav Sestak, Institute of Physics (Czech Republic)

Published in SPIE Proceedings Vol. 3178:
Solid State Crystals: Growth and Characterization
Jozef Zmija; Andrzej Majchrowski; Jaroslaw Rutkowski; Jerzy Zielinski, Editor(s)

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