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Proceedings Paper

Low-temperature direct bonding using pressure and temperature
Author(s): Albert Li; Robert W. Bower
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Paper Abstract

We have developed a three-step process to low temperature direct bond silicon and/or SiO2 surfaces. The process activates the surface with various plasma treatments including NH3, Ar and O. These activation processes allow a very strong low temperature bond to be created. The process requires techniques distinctly different from those found in previous work for reproducible results. The plasma processes do not result in a bond that propagates as a wave resulting from a point source initiation. A substantial pressure is required to initiate the bond. We have found that the three-step process using pressure and temperature results in very strong, reproducible bonds. The basic process consists of 1) the application of pressure for a period of 10 minutes, followed by 2) pressure and low temperature for another 30 minutes at 200 degrees C and finally 3) an anneal at low temperature of 200 degrees C for 24 hours. The bonds created by this process have a strength > 1000 ergs/cm2, which compares favorably with a conventional direct bond requiring an anneal > 1000 degrees C.

Paper Details

Date Published: 18 August 1997
PDF: 5 pages
Proc. SPIE 3184, Microelectronic Packaging and Laser Processing, (18 August 1997); doi: 10.1117/12.280563
Show Author Affiliations
Albert Li, Univ. of California/Davis (United States)
Robert W. Bower, Univ. of California/Davis (United States)

Published in SPIE Proceedings Vol. 3184:
Microelectronic Packaging and Laser Processing
Yong Khim Swee; HongYu Zheng; Ray T. Chen, Editor(s)

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