A 1.6kJ compact plasma focus source operated in neon at 5 Hz was demonstrated as an electron source for microlithography. LIthographs were obtained by exposing the resist (PMMA) to an electron beam emitted from the plasma focus through an extraction channel in its anode with a mask in contact with the resist. The total energy in the beam was estimated from the lithographs to be > 20mJ per shot with electron energy > 20kV, and > 1J with electron energy approximately 10keV. The electron beam from this plasma focus is able to expose greater than 1 cm² of resist placed 17cm from the source. Many samples with good resolution have ben obtained. An exposure can be mae on PMMA with only 10 shots over a period of 2 seconds. It is expected that with a higher sensitivity resist, an exposure can be made with a single shot.

Date Published: 14 August 1997
PDF: 9 pages
Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); doi: 10.1117/12.280538

Published in SPIE Proceedings Vol. 3183:
Microlithographic Techniques in IC Fabrication
Soon Fatt Yoon; Raymond Yu; Chris A. Mack, Editor(s)