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Proceedings Paper

Profile characteristics and simulation of chemically amplified resists in electron-beam lithography
Author(s): Young-Mog Ham; Changbuhm Lee; Soo-Hwan Kim; KukJin Chun
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Paper Abstract

We use the highly sensitive chemically amplified resist to obtain the high resolution and sensitivity in deep sub- micron region. We analyze the edge profiles and performances of resist by using the Electron-beam Lithography simulator (ELIS) and experiments. We mainly characterize the trend of resist profiles to measure the variation of wall angle, sensitivity, contrast, and solubility. In the simulation, development model for CAR is optimized to express the developed profiles of highly sensitive resist with high solubility and to have a good agreement with resist profiles in the electron beam lithography. From our results, we understand that resist edge profile depends on the solubility, sensitivity, and contrast of resist in the developer and got the high resolution to 0.15 micrometers line and space patterns using Leica EBMF 10.5 Gaussian beam. Finally, the ELIS simulator is useful in optimizing the deep sub- micron process.

Paper Details

Date Published: 14 August 1997
PDF: 7 pages
Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); doi: 10.1117/12.280536
Show Author Affiliations
Young-Mog Ham, Seoul National Univ., and Hyundai Electronics Industries Co. Ltd. (South Korea)
Changbuhm Lee, Seoul National Univ. (South Korea)
Soo-Hwan Kim, Seoul National Univ. (South Korea)
KukJin Chun, Seoul National Univ. (South Korea)


Published in SPIE Proceedings Vol. 3183:
Microlithographic Techniques in IC Fabrication
Soon Fatt Yoon; Raymond Yu; Chris A. Mack, Editor(s)

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