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Proceedings Paper

Broad-area semiconductor lasers with modulated reflectivity of the mirrors
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Paper Abstract

We provide results of the theoretical analysis of guided lateral mode in broad-area (BA) semiconductor lasers with modal reflectors formed by patterning the reflectivity of the front facet. The analysis has been performed by using a simple model based on the effective index method and the concept of the effective facet reflectivity. The numerical results include mode threshold conditions and far-field patterns of the lasing modes for various reflector configurations.

Paper Details

Date Published: 14 August 1997
PDF: 8 pages
Proc. SPIE 3186, Laser Technology V: Physics and Research and Development Trends, (14 August 1997); doi: 10.1117/12.280514
Show Author Affiliations
Michal Szymanski, Institute of Electron Technology (Poland)
Jacek Marek Kubica, Warsaw Univ. of Technology (Poland)
Pawel Szczepanski, Warsaw Univ. of Technology (Poland)
Bohdan Mroziewicz, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 3186:
Laser Technology V: Physics and Research and Development Trends
Wieslaw L. Wolinski; Michal Malinowski, Editor(s)

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