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Proceedings Paper

GRIN SCH SQW AlGaAs/GaAs lasers grown by molecular beam epitaxy: modeling and operating characteristics
Author(s): Maciej Bugajski; Maria Kaniewska; Kazimierz Reginski; Andrzej Malag; Slawomir Lepkowski; Jan Muszalski
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Paper Abstract

We present comprehensive numerical modeling of graded-index separate-confinement-heterostructure single-quantum well (GRIN SCH SQW) lasers. In particular, we present for the first time a modified drift-diffusion model of the laser, which correctly takes into account quantum nature of carriers in the active region. The drift-diffusion equations are solved self- consistently together with Schrodinger and Poisson equation. The analysis is carried out for the general case of MQW active region. We employ our model to predict the behavior of the devices fabricated by molecular beam epitaxy (MBE) technique. The broad contact, test lasers produced in our laboratory exhibited threshold current density Jth equals 350 A/cm2, intrinsic mode loses as low as 7 cm-1 and internal quantum efficiency near unity. External quantum efficiency above 80% was achieved. The emitted power per uncoated facet just before degradation was equal to 5 W for pulsed operation with 0.1% filing factor and 140 mW for cw operation. We also discuss the development of the technology in terms of growth temperature and V/III beam fluxes ratio optimization.

Paper Details

Date Published: 14 August 1997
PDF: 14 pages
Proc. SPIE 3186, Laser Technology V: Physics and Research and Development Trends, (14 August 1997); doi: 10.1117/12.280512
Show Author Affiliations
Maciej Bugajski, Institute of Electron Technology (Poland)
Maria Kaniewska, Institute of Electron Technology (Poland)
Kazimierz Reginski, Institute of Electron Technology (Poland)
Andrzej Malag, Institute of Electron Technology (Poland)
Slawomir Lepkowski, Institute of Electron Technology (Poland)
Jan Muszalski, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 3186:
Laser Technology V: Physics and Research and Development Trends
Wieslaw L. Wolinski; Michal Malinowski, Editor(s)

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