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Proceedings Paper

Injection-amplification IR-photodiodes
Author(s): Shamil D. Kurmashev; Vitaly I. Stafeev; I. Vikulin; Alexandr N. Sofronkov
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Paper Abstract

The results of the investigations of the injection photodiodes p-i-n structures, based on high-resistivity semiconductors, compensated by deep-level impurities, are presented. Mechanisms of the photoelectric injection amplification are discussed, which consists in the direct influence of light on the charge currier distribution parameters in the semiconductor volume. The diodes are shown to by sensitive in a broad spectral range. The integral sensitivity of photodetectors of this type is much higher than that of injectionless devices. The physical mechanism of the injection amplification of photocurrent in mercuri- compensated and indium antimonide under the effect of the middle IR-wavelength band electromagnetic radiation has been studied both theoretically and experimentally.

Paper Details

Date Published: 26 August 1997
PDF: 9 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280470
Show Author Affiliations
Shamil D. Kurmashev, Odessa State Univ. (Ukraine) and Orion (Russia)
Vitaly I. Stafeev, Odessa State Univ. (Ukraine) and Orion (Russia)
I. Vikulin, Odessa State Univ. (Ukraine) and Orion (Russia)
Alexandr N. Sofronkov, Odessa State Univ. (Ukraine) and Orion (Russia)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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